Electronic and Optical Properties of ZnIn2Te4
نویسندگان
چکیده
Abstract. Band structure and optical properties of defectChalcopyrite type semiconductor ZnIn2Te4 have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn2Te4 is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function ǫ(E) = ǫ1(E)+ iǫ2(E) reveal distinct structures at energies of the critical points in the Brillouin zone.
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